All IGBT. IKY40N120CS6 Datasheet

 

IKY40N120CS6 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKY40N120CS6
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K40MCS6
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 27
   Collector Capacity (Cc), typ, pF: 185
   Total Gate Charge (Qg), typ, nC: 285
   Package: TO247-4

 IKY40N120CS6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKY40N120CS6 Datasheet (PDF)

 ..1. Size:2032K  infineon
iky40n120cs6.pdf

IKY40N120CS6
IKY40N120CS6

IKY40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie

 4.1. Size:1575K  infineon
iky40n120ch3.pdf

IKY40N120CS6
IKY40N120CS6

IKY40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

Datasheet: IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IHW20N120R3 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF .

 

 
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