IKY40N120CS6 IGBT. Datasheet pdf. Equivalent
Type Designator: IKY40N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K40MCS6
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 500
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 27
Collector Capacity (Cc), typ, pF: 185
Total Gate Charge (Qg), typ, nC: 285
Package: TO247-4
IKY40N120CS6 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKY40N120CS6 Datasheet (PDF)
iky40n120cs6.pdf
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IKY40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie
iky40n120ch3.pdf
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IKY40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in
Datasheet: IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IHW20N120R3 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ