IKY75N120CH3 IGBT. Datasheet pdf. Equivalent
Type Designator: IKY75N120CH3
Type: IGBT + Anti-Parallel Diode
Marking Code: K75MCH3
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 938
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 32
Collector Capacity (Cc), typ, pF: 505
Total Gate Charge (Qg), typ, nC: 370
Package: TO247-4
IKY75N120CH3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKY75N120CH3 Datasheet (PDF)
iky75n120ch3.pdf
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iky75n120cs6.pdf
IKY75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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