All IGBT. IKY75N120CH3 Datasheet

 

IKY75N120CH3 Datasheet and Replacement


   Type Designator: IKY75N120CH3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75MCH3
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 938 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 505 pF
   Qg ⓘ - Total Gate Charge, typ: 370 nC
   Package: TO247-4
 

 IKY75N120CH3 substitution

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IKY75N120CH3 Datasheet (PDF)

 ..1. Size:1577K  infineon
 iky75n120ch3.pdf pdf_icon

IKY75N120CH3

IKY75N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

 4.1. Size:2024K  infineon
 iky75n120cs6.pdf pdf_icon

IKY75N120CH3

IKY75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DGF15N60CTL0 | 6SI75N12 | STGP20V60F | ISL9V5045S3ST-F085 | PS21265-P | DAZF150G120XCA | IGP30N65F5

Keywords - IKY75N120CH3 transistor datasheet

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