IRG4PC30UDPBF Datasheet. Specs and Replacement

Type Designator: IRG4PC30UDPBF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 23 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 21 nS

Coesⓘ - Output Capacitance, typ: 73 pF

Package: TO247

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IRG4PC30UDPBF datasheet

 ..1. Size:385K  international rectifier
irg4pc30udpbf.pdf pdf_icon

IRG4PC30UDPBF

PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation ... See More ⇒

 4.1. Size:216K  international rectifier
irg4pc30ud.pdf pdf_icon

IRG4PC30UDPBF

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒

 5.1. Size:151K  international rectifier
irg4pc30u.pdf pdf_icon

IRG4PC30UDPBF

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3... See More ⇒

 6.1. Size:150K  international rectifier
irg4pc30f.pdf pdf_icon

IRG4PC30UDPBF

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE ... See More ⇒

Specs: IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF, IRG4IBC10UDPBF, IRG4PC30FPBF, IRGP4063D, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF, IRG4PC50UPBF, IRG4PF50WPBF, IRG4PH30KPBF, IRG4PH40KDPBF

Keywords - IRG4PC30UDPBF transistor spec

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