IRG4PC30UDPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4PC30UDPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 100
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 23
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 21
Collector Capacity (Cc), typ, pF: 73
Total Gate Charge (Qg), typ, nC: 50
Package: TO247
IRG4PC30UDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4PC30UDPBF Datasheet (PDF)
irg4pc30udpbf.pdf
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PD - 95327IRG4PC30UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHzin resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation
irg4pc30ud.pdf
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PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an
irg4pc30u.pdf
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D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3
irg4pc30f.pdf
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D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE
irg4pc30kd.pdf
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PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin
irg4pc30fd.pdf
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PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high
irg4pc30s.pdf
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D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4pc30k.pdf
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D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design
irg4pc30w.pdf
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D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC
irg4pc30fpbf.pdf
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PD -94920IRG4PC30FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 17AE Industry stan
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![IRG4PC30UDPBF](https://alltransistors.com/images/us.png)
![IRG4PC30UDPBF](https://alltransistors.com/images/es.png)
![IRG4PC30UDPBF](https://alltransistors.com/images/ru.png)
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