IRG4PC30UDPBF Datasheet. Specs and Replacement
Type Designator: IRG4PC30UDPBF 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 23 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 73 pF
Package: TO247
IRG4PC30UDPBF Substitution - IGBTⓘ Cross-Reference Search
IRG4PC30UDPBF datasheet
irg4pc30udpbf.pdf
PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation ... See More ⇒
irg4pc30ud.pdf
PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒
irg4pc30u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3... See More ⇒
irg4pc30f.pdf
D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE ... See More ⇒
Specs: IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF, IRG4IBC10UDPBF, IRG4PC30FPBF, IRGP4063D, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF, IRG4PC50UPBF, IRG4PF50WPBF, IRG4PH30KPBF, IRG4PH40KDPBF
Keywords - IRG4PC30UDPBF transistor spec
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History: 2PG352 | 2SH11 | 2SH14 | 2N6977 | 2N6976 | 2PG401 | 2PG402
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