IRG4PC30UDPBF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG4PC30UDPBF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 100
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 23
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.95
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 21
Емкость коллектора типовая (Cc), pf: 73
Общий заряд затвора (Qg), typ, nC: 50
Тип корпуса: TO247
Аналог (замена) для IRG4PC30UDPBF
IRG4PC30UDPBF Datasheet (PDF)
irg4pc30udpbf.pdf
PD - 95327IRG4PC30UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHzin resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation
irg4pc30ud.pdf
PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an
irg4pc30u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3
irg4pc30f.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE
irg4pc30kd.pdf
PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin
irg4pc30fd.pdf
PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high
irg4pc30s.pdf
D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4pc30k.pdf
D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design
irg4pc30w.pdf
D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC
irg4pc30fpbf.pdf
PD -94920IRG4PC30FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 17AE Industry stan
Другие IGBT... IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IKW50N60H3 , IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ