IRG4PC50FPBF Datasheet. Specs and Replacement

Type Designator: IRG4PC50FPBF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Package: TO247

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IRG4PC50FPBF datasheet

 ..1. Size:310K  international rectifier
 irg4pc50fpbf.pdf pdf_icon

IRG4PC50FPBF

PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard ... See More ⇒

 5.1. Size:214K  international rectifier
 irg4pc50fd.pdf pdf_icon

IRG4PC50FPBF

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and high... See More ⇒

 5.2. Size:152K  international rectifier
 irg4pc50f.pdf pdf_icon

IRG4PC50FPBF

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,... See More ⇒

 5.3. Size:323K  international rectifier
 irg4pc50f-e.pdf pdf_icon

IRG4PC50FPBF

PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standar... See More ⇒

SHOW MORE

Specs: IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF, IRG4IBC10UDPBF, IRG4PC30FPBF, IRG4PC30UDPBF, IRG4PC40FDPBF, IRG7R313U, IRG4PC50SDPBF, IRG4PC50UDPBF, IRG4PC50UPBF, IRG4PF50WPBF, IRG4PH30KPBF, IRG4PH40KDPBF, IRG4PH50KDPBF, IRG4PH50UDPBF

Keywords - IRG4PC50FPBF transistor spec

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