All IGBT. IRG4PC50FPBF Datasheet

 

IRG4PC50FPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PC50FPBF
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 200
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 70
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 25
   Collector Capacity (Cc), typ, pF: 250
   Total Gate Charge (Qg), typ, nC: 190
   Package: TO247

 IRG4PC50FPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC50FPBF Datasheet (PDF)

 ..1. Size:310K  infineon
 irg4pc50fpbf.pdf

IRG4PC50FPBF IRG4PC50FPBF

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

 5.1. Size:214K  international rectifier
 irg4pc50fd.pdf

IRG4PC50FPBF IRG4PC50FPBF

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

 5.2. Size:152K  international rectifier
 irg4pc50f.pdf

IRG4PC50FPBF IRG4PC50FPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

 5.3. Size:323K  international rectifier
 irg4pc50f-e.pdf

IRG4PC50FPBF IRG4PC50FPBF

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

Datasheet: IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IHW40T60 , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF .

 

 
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