All IGBT. IRG4PC50UDPBF Datasheet

 

IRG4PC50UDPBF Datasheet and Replacement


   Type Designator: IRG4PC50UDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Qg ⓘ - Total Gate Charge, typ: 180 nC
   Package: TO247
 

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IRG4PC50UDPBF Datasheet (PDF)

 ..1. Size:687K  international rectifier
 irg4pc50udpbf.pdf pdf_icon

IRG4PC50UDPBF

PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation

 4.1. Size:219K  international rectifier
 irg4pc50ud.pdf pdf_icon

IRG4PC50UDPBF

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

 5.1. Size:153K  international rectifier
 irg4pc50u.pdf pdf_icon

IRG4PC50UDPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

 5.2. Size:635K  international rectifier
 irg4pc50upbf.pdf pdf_icon

IRG4PC50UDPBF

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr

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Datasheet: IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF , SGT40N60FD2PN , IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF .

Keywords - IRG4PC50UDPBF transistor datasheet

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