All IGBT. IRG4PH50UDPBF Datasheet

 

IRG4PH50UDPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PH50UDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 200
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 45
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.56
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 24
   Collector Capacity (Cc), typ, pF: 160
   Total Gate Charge (Qg), typ, nC: 160
   Package: TO247

 IRG4PH50UDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PH50UDPBF Datasheet (PDF)

 ..1. Size:681K  infineon
 irg4ph50udpbf.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous gener

 4.1. Size:229K  international rectifier
 irg4ph50ud.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

 5.1. Size:137K  international rectifier
 irg4ph50u.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

 5.2. Size:137K  infineon
 irg4ph50u.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4PH50KDPBF

 

 
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