All IGBT. IRG4PH50UDPBF Datasheet

 

IRG4PH50UDPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PH50UDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.56 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247

 IRG4PH50UDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PH50UDPBF Datasheet (PDF)

 ..1. Size:681K  infineon
 irg4ph50udpbf.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous gener

 4.1. Size:229K  international rectifier
 irg4ph50ud.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

 5.1. Size:137K  international rectifier
 irg4ph50u.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

 5.2. Size:137K  infineon
 irg4ph50u.pdf

IRG4PH50UDPBF IRG4PH50UDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

Datasheet: IRG4PC50FPBF , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , GT30F131 , IRG4PSC71KDPBF , IRG7PH35UDPBF , IRG7PH35UD-EP , IRG7PH42UDPBF , IRGB4056DPBF , IRGB4620DPBF , IRGIB4620DPBF , IRGP4620DPBF .

 

 
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