IRG7PH35UD-EP IGBT. Datasheet pdf. Equivalent

   Type Designator: IRG7PH35UD-EP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 180
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 120
   Total Gate Charge (Qg), typ, nC: 85
   Package: TO247

IRG7PH35UD-EP Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7PH35UD-EP Datasheet (PDF)

..1. Size:462K infineon
irg7ph35udpbf irg7ph35ud-ep.pdf

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

4.1. Size:300K international rectifier
irg7ph35ud1m.pdf

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

4.2. Size:326K international rectifier
irg7ph35ud1.pdf

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

4.3. Size:461K international rectifier
irg7ph35ud.pdf