IRG7PH35UD-EP PDF and Equivalents Search

 

IRG7PH35UD-EP Specs and Replacement

Type Designator: IRG7PH35UD-EP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

 IRG7PH35UD-EP Substitution

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IRG7PH35UD-EP datasheet

 ..1. Size:462K  international rectifier
 irg7ph35udpbf irg7ph35ud-ep.pdf pdf_icon

IRG7PH35UD-EP

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒

 4.1. Size:300K  international rectifier
 irg7ph35ud1m.pdf pdf_icon

IRG7PH35UD-EP

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM ... See More ⇒

 4.2. Size:326K  international rectifier
 irg7ph35ud1.pdf pdf_icon

IRG7PH35UD-EP

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒

 4.3. Size:461K  international rectifier
 irg7ph35ud.pdf pdf_icon

IRG7PH35UD-EP

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒

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Specs: IRG4PC50UPBF, IRG4PF50WPBF, IRG4PH30KPBF, IRG4PH40KDPBF, IRG4PH50KDPBF, IRG4PH50UDPBF, IRG4PSC71KDPBF, IRG7PH35UDPBF, FGPF4633, IRG7PH42UDPBF, IRGB4056DPBF, IRGB4620DPBF, IRGIB4620DPBF, IRGP4620DPBF, IRGS4620DPBF, IRGB4630DPBF, IRGIB4630DPBF

Keywords - IRG7PH35UD-EP transistor spec

 IRG7PH35UD-EP cross reference
 IRG7PH35UD-EP equivalent finder
 IRG7PH35UD-EP lookup
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