IRG7PH35UD-EP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG7PH35UD-EP
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 180
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 50
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 15
Емкость коллектора типовая (Cc), pf: 120
Общий заряд затвора (Qg), typ, nC: 85
Тип корпуса: TO247
Аналог (замена) для IRG7PH35UD-EP
IRG7PH35UD-EP Datasheet (PDF)
irg7ph35udpbf irg7ph35ud-ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
irg7ph35ud1m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM
irg7ph35ud1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
irg7ph35ud.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
irg7ph35ud1-ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
Другие IGBT... IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF , RJH60F5DPQ-A0 , IRG7PH42UDPBF , IRGB4056DPBF , IRGB4620DPBF , IRGIB4620DPBF , IRGP4620DPBF , IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF .
![IRG7PH35UD-EP](https://alltransistors.com/images/us.png)
![IRG7PH35UD-EP](https://alltransistors.com/images/es.png)
![IRG7PH35UD-EP](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ