IRGIB15B60KD1P IGBT. Datasheet pdf. Equivalent
Type Designator: IRGIB15B60KD1P
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 52
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 19
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 25
Collector Capacity (Cc), typ, pF: 100
Total Gate Charge (Qg), typ, nC: 56
Package: TO220F
IRGIB15B60KD1P Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGIB15B60KD1P Datasheet (PDF)
irgib15b60kd1p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD- 94914IRGIB15B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici
irgib15b60kd1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici
irgib10b60kd1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie
irgib10b60kd1p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E
Datasheet: IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF , IRGS4630DPBF , IRGB4B60KD1PBF , IRGS4B60KD1PBF , IRGSL4B60KD1PBF , IRGIB10B60KD1P , SGT40N60FD2PT , IRGP20B60PDPBF , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF .
![IRGIB15B60KD1P](https://alltransistors.com/images/us.png)
![IRGIB15B60KD1P](https://alltransistors.com/images/es.png)
![IRGIB15B60KD1P](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ