IRGP4062DPBF PDF and Equivalents Search

 

IRGP4062DPBF Specs and Replacement

Type Designator: IRGP4062DPBF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 129 pF

Package: TO220AB

 IRGP4062DPBF Substitution

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IRGP4062DPBF datasheet

 ..1. Size:415K  international rectifier
irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf pdf_icon

IRGP4062DPBF

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

 5.1. Size:434K  international rectifier
irgp4062d.pdf pdf_icon

IRGP4062DPBF

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

 5.2. Size:314K  international rectifier
auirgp4062d.pdf pdf_icon

IRGP4062DPBF

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tSC 5 s, TJ(max) = 175 C 5 s SCSOA Square RBSOA E VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co... See More ⇒

 5.3. Size:434K  international rectifier
irgp4062d-e.pdf pdf_icon

IRGP4062DPBF

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

Specs: IRGS4630DPBF, IRGB4B60KD1PBF, IRGS4B60KD1PBF, IRGSL4B60KD1PBF, IRGIB10B60KD1P, IRGIB15B60KD1P, IRGP20B60PDPBF, IRGP35B60PDPBF, TGAN60N60F2DS, IRGB4062DPBF, IRGP4062D-EPBF, IRGP4063DPBF, IRGP4063PBF, IRGP4066DPBF, IRGP4066D-EPBF, IRGP4068DPBF, IRGP4068D-EPBF

Keywords - IRGP4062DPBF transistor spec

 IRGP4062DPBF cross reference
 IRGP4062DPBF equivalent finder
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