IRGP4062DPBF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGP4062DPBF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 48 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 22 nS
Coesⓘ - Выходная емкость, типовая: 129 pF
Qgⓘ - Общий заряд затвора, typ: 50 nC
Тип корпуса: TO220AB
Аналог (замена) для IRGP4062DPBF
IRGP4062DPBF Datasheet (PDF)
irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf
IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E
irgp4062d.pdf
IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E
auirgp4062d.pdf
PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co
irgp4062d-e.pdf
IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E
auirgb4062d auirgp4062d auirgp4062d-e.pdf
PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V
auirgp4062d1.pdf
AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty
auirgp4062d auirgp4062d-e.pdf
AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2