IRGP4066D-EPBF PDF and Equivalents Search

 

IRGP4066D-EPBF Specs and Replacement

Type Designator: IRGP4066D-EPBF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 454 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

 IRGP4066D-EPBF Substitution

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IRGP4066D-EPBF datasheet

 ..1. Size:315K  international rectifier
 irgp4066dpbf irgp4066d-epbf.pdf pdf_icon

IRGP4066D-EPBF

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 3.1. Size:331K  international rectifier
 irgp4066d-e.pdf pdf_icon

IRGP4066D-EPBF

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 5.1. Size:331K  international rectifier
 irgp4066d.pdf pdf_icon

IRGP4066D-EPBF

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 5.2. Size:363K  international rectifier
 auirgp4066d1.pdf pdf_icon

IRGP4066D-EPBF

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching losses G tSC 5 s, TJ(max) = 175 C Maximum Junction temperature 175 C 5 S short circuit SOA E VCE(on) typ. = 1.70V Square RBSOA n-channel 100... See More ⇒

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Specs: IRGP20B60PDPBF, IRGP35B60PDPBF, IRGP4062DPBF, IRGB4062DPBF, IRGP4062D-EPBF, IRGP4063DPBF, IRGP4063PBF, IRGP4066DPBF, IRG4PC50UD, IRGP4068DPBF, IRGP4068D-EPBF, IRGP4069DPBF, IRGP4650DPBF, IRGP4660DPBF, IRGP50B60PD1PBF, IRGP6690DPBF, IRGP6690D-EPBF

Keywords - IRGP4066D-EPBF transistor spec

 IRGP4066D-EPBF cross reference
 IRGP4066D-EPBF equivalent finder
 IRGP4066D-EPBF lookup
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