All IGBT. IRGP6690D-EPBF Datasheet

 

IRGP6690D-EPBF Datasheet and Replacement


   Type Designator: IRGP6690D-EPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 483 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 92 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO247
 

 IRGP6690D-EPBF substitution

   - IGBT ⓘ Cross-Reference Search

 

IRGP6690D-EPBF Datasheet (PDF)

 ..1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6690D-EPBF

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 5.1. Size:649K  international rectifier
 irgp6690d.pdf pdf_icon

IRGP6690D-EPBF

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 8.1. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6690D-EPBF

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

 8.2. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6690D-EPBF

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

SHOW MORE

Datasheet: IRGP4066D-EPBF , IRGP4068DPBF , IRGP4068D-EPBF , IRGP4069DPBF , IRGP4650DPBF , IRGP4660DPBF , IRGP50B60PD1PBF , IRGP6690DPBF , RJH60F7BDPQ-A0 , IRGPS46160DPBF , IRGS4640DPBF , IRGSL4640DPBF , IRGB4640DPBF , IRGP4640DPBF , IRGP4640D-EPBF , DGF15N60CTL , DGF15N60CTL0 .

Keywords - IRGP6690D-EPBF transistor datasheet

 IRGP6690D-EPBF cross reference
 IRGP6690D-EPBF equivalent finder
 IRGP6690D-EPBF lookup
 IRGP6690D-EPBF substitution
 IRGP6690D-EPBF replacement

 

 
Back to Top

 


 
.