IRGSL4640DPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRGSL4640DPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 65 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 129 pF
Qgⓘ - Total Gate Charge, typ: 50 nC
Package: TO262
IRGSL4640DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGSL4640DPBF Datasheet (PDF)
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
irgsl4640d.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
irgsl4b60kd1.pdf
PD - 94607BIRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated
irgsl4062d.pdf
PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur
auirgsl4062d1.pdf
AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
irgsl4b60k.pdf
PD - 94633AIRGB4B60KIRGS4B60KIRGSL4B60KINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150CEVCE(on) typ. = 2.1VBenefits
irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf.pdf
PD - 95616AIRGB4B60KD1PbFIRGS4B60KD1PbFIRGSL4B60KD1PbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperatu
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