All IGBT. IXGH28N60B Datasheet

 

IXGH28N60B Datasheet and Replacement


   Type Designator: IXGH28N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qg ⓘ - Total Gate Charge, typ: 68 nC
   Package: TO247
 

 IXGH28N60B substitution

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IXGH28N60B Datasheet (PDF)

 ..1. Size:588K  ixys
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IXGH28N60B

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 VIXGT 28N60B IC25 = 40 AVCE(sat) = 2.0 VSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C28 AICM TC = 25C, 1 ms 80 AC (TAB)SSOA VGE = 15 V,

 0.1. Size:65K  ixys
 ixgh28n60b3d1.pdf pdf_icon

IXGH28N60B

Advance Technical InformationIXGH28N60B3D1 VCES = 600VPolarHVTM IGBTIC110 = 28A VCE(sat) 1.8V TO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V C (TAB)CEIC25 TC = 25C 66 AIC110 TC = 110C 28 AIF110 TC = 110C 10 A

 0.2. Size:56K  ixys
 ixgh28n60bd1 ixgt28n60bd1.pdf pdf_icon

IXGH28N60B

Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 8

 0.3. Size:515K  ixys
 ixgh28n60bd1.pdf pdf_icon

IXGH28N60B

Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VCombi PackSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 80 A

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Datasheet: IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 , IXGH28N30A , IXGH28N30B , YGW60N65F1A1 , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , IXGH30N60BU1 , IXGH31N60 .

Keywords - IXGH28N60B transistor datasheet

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