IXGH28N60B PDF and Equivalents Search

 

IXGH28N60B Specs and Replacement

Type Designator: IXGH28N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO247

 IXGH28N60B Substitution

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IXGH28N60B datasheet

 ..1. Size:588K  ixys
 ixgh28n60b.pdf pdf_icon

IXGH28N60B

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,... See More ⇒

 0.1. Size:65K  ixys
 ixgh28n60b3d1.pdf pdf_icon

IXGH28N60B

Advance Technical Information IXGH28N60B3D1 VCES = 600V PolarHVTM IGBT IC110 = 28A VCE(sat) 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 66 A IC110 TC = 110 C 28 A IF110 TC = 110 C 10 A ... See More ⇒

 0.2. Size:56K  ixys
 ixgh28n60bd1 ixgt28n60bd1.pdf pdf_icon

IXGH28N60B

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8... See More ⇒

 0.3. Size:515K  ixys
 ixgh28n60bd1.pdf pdf_icon

IXGH28N60B

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A ... See More ⇒

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Specs: IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 , IXGH28N30A , IXGH28N30B , RJH30E2DPP , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , IXGH30N60BU1 , IXGH31N60 .

History: IXGH15N120CD1

Keywords - IXGH28N60B transistor spec

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