IRGP4640D-EPBF Datasheet and Replacement

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

IRGP4640PbFIRGP4640-EPbFINSULATED GATE BIPOLAR TRANSISTORVCES = 600VCCCIC = 40A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGE GVCE(on) typ. = 1.60V @ IC = 24An-channelTO-247AC TO-247ADIRGP4640PbF IRGP4640-EPGC EApplications Gate Collector Emitter Inverters UPS WeldingFeatures BenefitsHigh efficiency in a wide range of applications

IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi

PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp

IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi

IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

IRGP4690DPbFIRGP4690D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 90A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGVCE(on) typ. = 1.70V @ IC = 75A GETO-247AC TO-247ADn-channelIRGP4690DPbF IRGP4690D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldin

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust