All IGBT. DGF15N60CTL Datasheet

 

DGF15N60CTL Datasheet and Replacement


   Type Designator: DGF15N60CTL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 31 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 56 pF
   Package: TO220F
      - IGBT Cross-Reference

 

DGF15N60CTL Datasheet (PDF)

 ..1. Size:460K  cn yangzhou yangjie elec
 dgf15n60ctl.pdf pdf_icon

DGF15N60CTL

RoHS DGF15N60CTL COMPLIANT IGBT Discrete V 600 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,

 0.1. Size:461K  cn yangzhou yangjie elec
 dgf15n60ctl0.pdf pdf_icon

DGF15N60CTL

RoHS DGF15N60CTL0 COMPLIANT IGBT Discrete V 600 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switching applications Air conditioning Motor drive inverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness

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Keywords - DGF15N60CTL transistor datasheet

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