All IGBT. DGP10N65CTL Datasheet

 

DGP10N65CTL IGBT. Datasheet pdf. Equivalent


   Type Designator: DGP10N65CTL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 110
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 18
   Collector Capacity (Cc), typ, pF: 56
   Total Gate Charge (Qg), typ, nC: 52
   Package: TO220

 DGP10N65CTL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGP10N65CTL Datasheet (PDF)

 ..1. Size:223K  cn yangzhou yangjie elec
 dgp10n65ctl.pdf

DGP10N65CTL DGP10N65CTL

RoHS DGP10N65CTL COMPLIANT IGBT Descrete V 650 V CEI 10 A CV I = A 1.65 V CE(SAT) C 10 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,

 7.1. Size:263K  cn yangzhou yangjie elec
 dgp10n60ctl.pdf

DGP10N65CTL DGP10N65CTL

RoHS DGP10N60CTL COMPLIANT IGBT Descrete V 600 V CEI 10 A CV I = A 1.65 V CE(SAT) C 10 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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