All IGBT. DGW75N65CTL1 Datasheet

 

DGW75N65CTL1 Datasheet and Replacement


   Type Designator: DGW75N65CTL1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.85 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 91 nS
   Qgⓘ - Total Gate Charge, typ: 580 nC
   Package: TO247
      - IGBT Cross-Reference

 

DGW75N65CTL1 Datasheet (PDF)

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DGW75N65CTL1

RoHS DGW75N65CTL1 COMPLIANT IGBT Discrete V 650 V CEI 75 A CVCE(SAT) 1.65 V I = AC 75 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Pos

Datasheet: DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , RJP30H2A , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD .

History: IGC189T120T6RL

Keywords - DGW75N65CTL1 transistor datasheet

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