All IGBT. DGW75N65CTL1 Datasheet

 

DGW75N65CTL1 IGBT. Datasheet pdf. Equivalent

Type Designator: DGW75N65CTL1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 395

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 85

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.85

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 91

Total Gate Charge (Qg), typ, nC: 580

Package: TO247

DGW75N65CTL1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW75N65CTL1 Datasheet (PDF)

 ..1. Size:630K  cn yangzhou yangjie elec
 dgw75n65ctl1.pdf

DGW75N65CTL1 DGW75N65CTL1

RoHS DGW75N65CTL1 COMPLIANT IGBT Discrete V 650 V CEI 75 A CVCE(SAT) 1.65 V I = AC 75 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Pos

Datasheet: DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , IRG7R313U , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD .

 

 
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