All IGBT. DGW75N65CTL1 Datasheet

 

DGW75N65CTL1 Datasheet and Replacement


   Type Designator: DGW75N65CTL1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.85 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 91 nS
   Qg ⓘ - Total Gate Charge, typ: 580 nC
   Package: TO247
 

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DGW75N65CTL1 Datasheet (PDF)

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DGW75N65CTL1

RoHS DGW75N65CTL1 COMPLIANT IGBT Discrete V 650 V CEI 75 A CVCE(SAT) 1.65 V I = AC 75 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Pos

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG400KR120U | F3L300R12MT4_B23 | IRGS4607D | IXGH30N60C3C1 | MMG200DR120DE | SPF15N65T1T2TL | F4-150R12KS4

Keywords - DGW75N65CTL1 transistor datasheet

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