DGW75N65CTL1 Datasheet. Specs and Replacement

Type Designator: DGW75N65CTL1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 395 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 91 nS

Package: TO247

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DGW75N65CTL1 datasheet

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DGW75N65CTL1

RoHS DGW75N65CTL1 COMPLIANT IGBT Discrete V 650 V CE I 75 A C V CE(SAT) 1.65 V I = A C 75 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Pos... See More ⇒

Specs: DGW40N120CTL, DGW40N65BTH, DGW40N65CTH, DGW40N65CTL, DGW50N65BTH, DGW50N65CTH, DGW50N65CTL1, DGW60N65BTH, FGH40N60SFD, ATGH40N120F2DR, TGAF40N60F2D, TGAN15N120FDR, TGAN15S135FD, TGAN20N135F3D, TGAN20N150FD, TGAN20S135FD, TGAN20S150FD

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