TGAN60N65F2DR PDF and Equivalents Search

 

TGAN60N65F2DR Specs and Replacement

Type Designator: TGAN60N65F2DR

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 147 pF

Package: TO3PN

 TGAN60N65F2DR Substitution

- IGBT ⓘ Cross-Reference Search

 

TGAN60N65F2DR datasheet

 ..1. Size:987K  trinnotech
 tgan60n65f2dr.pdf pdf_icon

TGAN60N65F2DR

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N... See More ⇒

 2.1. Size:818K  trinnotech
 tgan60n65f2ds.pdf pdf_icon

TGAN60N65F2DR

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN ... See More ⇒

 6.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf pdf_icon

TGAN60N65F2DR

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim... See More ⇒

 6.2. Size:1102K  trinnotech
 tgan60n60fd.pdf pdf_icon

TGAN60N65F2DR

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG... See More ⇒

SHOW MORE

Specs: TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , SGT40N60FD2PN , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS .

Keywords - TGAN60N65F2DR transistor spec

 TGAN60N65F2DR cross reference
 TGAN60N65F2DR equivalent finder
 TGAN60N65F2DR lookup
 TGAN60N65F2DR substitution
 TGAN60N65F2DR replacement

 

 

 

 

↑ Back to Top
.