Справочник IGBT. TGAN60N65F2DR

 

TGAN60N65F2DR - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: TGAN60N65F2DR
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 428 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 25 nS
   Coesⓘ - Выходная емкость, типовая: 147 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO3PN

 Аналог (замена) для TGAN60N65F2DR

 

 

TGAN60N65F2DR Datasheet (PDF)

 ..1. Size:987K  trinnotech
 tgan60n65f2dr.pdf

TGAN60N65F2DR TGAN60N65F2DR

TGAN60N65F2DRField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N

 2.1. Size:818K  trinnotech
 tgan60n65f2ds.pdf

TGAN60N65F2DR TGAN60N65F2DR

TGAN60N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN60N65F2DS TO-3PN

 6.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf

TGAN60N65F2DR TGAN60N65F2DR

TGAN60N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHSAbsolute Maxim

 6.2. Size:1102K  trinnotech
 tgan60n60fd.pdf

TGAN60N65F2DR TGAN60N65F2DR

TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :Induction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN60N60FD TO-3PN TG

Другие IGBT... TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , IHW20N135R5 , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS .

 

 
Back to Top