TGAN60N65F2DR - аналоги и описание IGBT

 

TGAN60N65F2DR - аналоги, основные параметры, даташиты

Наименование: TGAN60N65F2DR

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 428 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 25 nS

Coesⓘ - Выходная емкость, типовая: 147 pF

Тип корпуса: TO3PN

 Аналог (замена) для TGAN60N65F2DR

- подбор ⓘ IGBT транзистора по параметрам

 

TGAN60N65F2DR даташит

 ..1. Size:987K  trinnotech
tgan60n65f2dr.pdfpdf_icon

TGAN60N65F2DR

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N

 2.1. Size:818K  trinnotech
tgan60n65f2ds.pdfpdf_icon

TGAN60N65F2DR

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN

 6.1. Size:967K  trinnotech
tgan60n60f2ds.pdfpdf_icon

TGAN60N65F2DR

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim

 6.2. Size:1102K  trinnotech
tgan60n60fd.pdfpdf_icon

TGAN60N65F2DR

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG

Другие IGBT... TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , SGT40N60FD2PN , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS .

History: RJP60F5DPK | SRE50N120FSUDAT | YGW60N65F1A2 | SII75N06 | TGAF40N60F2D | VS-GB150LH120N | TT030N065EI

 

 

 

 

↑ Back to Top
.