All IGBT. TGAN80N60F2DS Datasheet

 

TGAN80N60F2DS Datasheet and Replacement


   Type Designator: TGAN80N60F2DS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 481 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 225 pF
   Package: TO3PN
      - IGBT Cross-Reference

 

TGAN80N60F2DS Datasheet (PDF)

 ..1. Size:969K  trinnotech
 tgan80n60f2ds.pdf pdf_icon

TGAN80N60F2DS

TGAN80N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN80N60F2DS TO-3PN TGAN80N60F2DS RoHSAbsolute Maxim

 6.1. Size:984K  trinnotech
 tgan80n65f2ds.pdf pdf_icon

TGAN80N60F2DS

TGAN80N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN80N65F2DS TO-3PN TGAN8

Datasheet: TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , IHW20N135R5 , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS .

History: IXXH100N60B3

Keywords - TGAN80N60F2DS transistor datasheet

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