TGAN80N60F2DS PDF and Equivalents Search

 

TGAN80N60F2DS Specs and Replacement

Type Designator: TGAN80N60F2DS

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 481 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 225 pF

Package: TO3PN

 TGAN80N60F2DS Substitution

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TGAN80N60F2DS datasheet

 ..1. Size:969K  trinnotech
 tgan80n60f2ds.pdf pdf_icon

TGAN80N60F2DS

TGAN80N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN80N60F2DS TO-3PN TGAN80N60F2DS RoHS Absolute Maxim... See More ⇒

 6.1. Size:984K  trinnotech
 tgan80n65f2ds.pdf pdf_icon

TGAN80N60F2DS

TGAN80N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN80N65F2DS TO-3PN TGAN8... See More ⇒

Specs: TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , IHW20N135R5 , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS .

History: T1200TB25A | STGB18N40LZ | RJH60D7BDPQ-E0 | TGAN40N65F2DS | NGTB30N60FLWG

Keywords - TGAN80N60F2DS transistor spec

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