All IGBT. HCKD5N65BM2 Datasheet

 

HCKD5N65BM2 IGBT. Datasheet pdf. Equivalent


   Type Designator: HCKD5N65BM2
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 69
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 10
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 26.1
   Package: TO252

 HCKD5N65BM2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HCKD5N65BM2 Datasheet (PDF)

 ..1. Size:1380K  cn vgsemi
hckd5n65bm2.pdf

HCKD5N65BM2
HCKD5N65BM2

HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

 6.1. Size:1381K  cn vgsemi
hckd5n65am2.pdf

HCKD5N65BM2
HCKD5N65BM2

HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

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