All IGBT. HCKD5N65BM2 Datasheet

 

HCKD5N65BM2 Datasheet and Replacement


   Type Designator: HCKD5N65BM2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 26.1 pF
   Package: TO252
 

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HCKD5N65BM2 Datasheet (PDF)

 ..1. Size:1380K  cn vgsemi
 hckd5n65bm2.pdf pdf_icon

HCKD5N65BM2

HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

 6.1. Size:1381K  cn vgsemi
 hckd5n65am2.pdf pdf_icon

HCKD5N65BM2

HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

Datasheet: TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , IKW30N60H3 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW .

History: FGH75T65SQD | IXGH40N120C3D1

Keywords - HCKD5N65BM2 transistor datasheet

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