HCKD5N65BM2 IGBT. Datasheet pdf. Equivalent
Type Designator: HCKD5N65BM2
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 69
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 10
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 26.1
Package: TO252
HCKD5N65BM2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKD5N65BM2 Datasheet (PDF)
hckd5n65bm2.pdf
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HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
hckd5n65am2.pdf
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HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![HCKD5N65BM2](https://alltransistors.com/images/us.png)
![HCKD5N65BM2](https://alltransistors.com/images/es.png)
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ