IXGH30N60BU1 Datasheet and Replacement
Type Designator: IXGH30N60BU1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 240 pF
Package: TO247
- IGBT Cross-Reference
IXGH30N60BU1 Datasheet (PDF)
ixgh30n60bu1.pdf

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 VIXGT 30N60BU1 IC25 = 60 Awith DiodeVCE(sat) = 1.8 VCombi Packtfi = 100 nsTO-268(IXGT)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AC (TAB)IC110 TC = 110C30 AGICM
ixgh30n60b2.pdf

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)
ixgh30n60b2d1.pdf

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)
ixgh30n60b2 ixgt30n60b2.pdf

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)
Datasheet: IXGH28N30B , IXGH28N60B , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , JT075N065WED , IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 .
History: FGA30S120P | SMBH1G100US60 | RJP60V0DPM | GT10G101 | MG300N1US1 | GT50T101 | IRGP6660D
Keywords - IXGH30N60BU1 transistor datasheet
IXGH30N60BU1 cross reference
IXGH30N60BU1 equivalent finder
IXGH30N60BU1 lookup
IXGH30N60BU1 substitution
IXGH30N60BU1 replacement
History: FGA30S120P | SMBH1G100US60 | RJP60V0DPM | GT10G101 | MG300N1US1 | GT50T101 | IRGP6660D



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