All IGBT. IXGH30N60BU1 Datasheet

 

IXGH30N60BU1 Datasheet and Replacement


   Type Designator: IXGH30N60BU1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH30N60BU1 Datasheet (PDF)

 ..1. Size:138K  ixys
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IXGH30N60BU1

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 VIXGT 30N60BU1 IC25 = 60 Awith DiodeVCE(sat) = 1.8 VCombi Packtfi = 100 nsTO-268(IXGT)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AC (TAB)IC110 TC = 110C30 AGICM

 4.1. Size:576K  ixys
ixgh30n60b2.pdf pdf_icon

IXGH30N60BU1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

 4.2. Size:506K  ixys
ixgh30n60b2d1.pdf pdf_icon

IXGH30N60BU1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 4.3. Size:578K  ixys
ixgh30n60b2 ixgt30n60b2.pdf pdf_icon

IXGH30N60BU1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

Datasheet: IXGH28N30B , IXGH28N60B , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , JT075N065WED , IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 .

History: FGA30S120P | SMBH1G100US60 | RJP60V0DPM | GT10G101 | MG300N1US1 | GT50T101 | IRGP6660D

Keywords - IXGH30N60BU1 transistor datasheet

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