MSG40T120FL Specs and Replacement
Type Designator: MSG40T120FL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 297 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 84 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
MSG40T120FL Substitution - IGBT ⓘ Cross-Reference Search
MSG40T120FL datasheet
msg40t120fl.pdf
MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒
msg40t120fh.pdf
MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒
msg40t120fh msg40t120fhw.pdf
MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin... See More ⇒
msg40t120fqc.pdf
MSG40T120FQC Features Low gate charge. Trench FS Technology Saturation Voltage VCE(sat) = 1.8V @ IC = 40 A RoHS Complaint Applications General purpose inverters UPS Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 1200 CES V Gate to Emitter Voltage V 20 GES Turn-off safe area - 160 A T =25 80 C Collector Curren... See More ⇒
Specs: MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MSG40T120FHW , SGT40N60FD2PT , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 .
History: MSG40T65FFC | MSG30T65FHT | MSG20T65FQS
Keywords - MSG40T120FL transistor spec
MSG40T120FL cross reference
MSG40T120FL equivalent finder
MSG40T120FL lookup
MSG40T120FL substitution
MSG40T120FL replacement
History: MSG40T65FFC | MSG30T65FHT | MSG20T65FQS
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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