Справочник IGBT. MSG40T120FL

 

MSG40T120FL Даташит. Аналоги. Параметры и характеристики.


   Наименование: MSG40T120FL
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 297 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 84 nS
   Coesⓘ - Выходная емкость, типовая: 160 pF
   Тип корпуса: TO247
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MSG40T120FL Datasheet (PDF)

 ..1. Size:1479K  cn maspower
msg40t120fl.pdfpdf_icon

MSG40T120FL

MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.1. Size:3086K  cn maspower
msg40t120fh.pdfpdf_icon

MSG40T120FL

MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.2. Size:1718K  cn maspower
msg40t120fh msg40t120fhw.pdfpdf_icon

MSG40T120FL

MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 4.3. Size:6609K  cn maspower
msg40t120fqc.pdfpdf_icon

MSG40T120FL

MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren

Другие IGBT... MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MSG40T120FHW , MBQ50T65FESC , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 .

History: OST60N65HSXF | APT33GF120B2RD | 4MBI400VG-060R-50 | SM2G100US60 | FD1600-1200R17HP4-K-B2 | APTGF300SK120 | FGPF4565

 

 
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