MSG40T120FL Даташит. Аналоги. Параметры и характеристики.
Наименование: MSG40T120FL
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 297 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 84 nS
Coesⓘ - Выходная емкость, типовая: 160 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
MSG40T120FL Datasheet (PDF)
msg40t120fl.pdf

MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
msg40t120fh.pdf

MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
msg40t120fh msg40t120fhw.pdf

MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin
msg40t120fqc.pdf

MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren
Другие IGBT... MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MSG40T120FHW , MBQ50T65FESC , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 .
History: OST60N65HSXF | APT33GF120B2RD | 4MBI400VG-060R-50 | SM2G100US60 | FD1600-1200R17HP4-K-B2 | APTGF300SK120 | FGPF4565
History: OST60N65HSXF | APT33GF120B2RD | 4MBI400VG-060R-50 | SM2G100US60 | FD1600-1200R17HP4-K-B2 | APTGF300SK120 | FGPF4565



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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