All IGBT. MSG80N350FH Datasheet

 

MSG80N350FH IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG80N350FH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 380
   Maximum Collector-Emitter Voltage |Vce|, V: 330
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 180
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 45
   Collector Capacity (Cc), typ, pF: 320
   Total Gate Charge (Qg), typ, nC: 162
   Package: TO247

 MSG80N350FH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG80N350FH Datasheet (PDF)

 ..1. Size:6662K  cn maspower
 msg80n350fh.pdf

MSG80N350FH MSG80N350FH

MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC

 4.1. Size:6853K  cn maspower
 msg80n350fqc.pdf

MSG80N350FH MSG80N350FH

MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T

 4.2. Size:6611K  cn maspower
 msg80n350fl.pdf

MSG80N350FH MSG80N350FH

MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

 5.1. Size:5161K  cn maspower
 msg80n350hlc0.pdf

MSG80N350FH MSG80N350FH

MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

Datasheet: MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , TGAN40N60FD , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 , MSG80N60FQC , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 .

 

 
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