All IGBT. MSG80N350FH Datasheet

 

MSG80N350FH Datasheet and Replacement


   Type Designator: MSG80N350FH
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 180 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 320 pF
   Package: TO247
      - IGBT Cross-Reference

 

MSG80N350FH Datasheet (PDF)

 ..1. Size:6662K  cn maspower
msg80n350fh.pdf pdf_icon

MSG80N350FH

MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC

 4.1. Size:6853K  cn maspower
msg80n350fqc.pdf pdf_icon

MSG80N350FH

MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T

 4.2. Size:6611K  cn maspower
msg80n350fl.pdf pdf_icon

MSG80N350FH

MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

 5.1. Size:5161K  cn maspower
msg80n350hlc0.pdf pdf_icon

MSG80N350FH

MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

Datasheet: MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , FGPF4533 , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 , MSG80N60FQC , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 .

History: HGTP10N50E1

Keywords - MSG80N350FH transistor datasheet

 MSG80N350FH cross reference
 MSG80N350FH equivalent finder
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