All IGBT. MSG80N350FQC Datasheet

 

MSG80N350FQC IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG80N350FQC
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 380
   Maximum Collector-Emitter Voltage |Vce|, V: 330
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 180
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 45
   Collector Capacity (Cc), typ, pF: 320
   Total Gate Charge (Qg), typ, nC: 162
   Package: TO247

 MSG80N350FQC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG80N350FQC Datasheet (PDF)

 ..1. Size:6853K  cn maspower
 msg80n350fqc.pdf

MSG80N350FQC MSG80N350FQC

MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T

 4.1. Size:6662K  cn maspower
 msg80n350fh.pdf

MSG80N350FQC MSG80N350FQC

MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC

 4.2. Size:6611K  cn maspower
 msg80n350fl.pdf

MSG80N350FQC MSG80N350FQC

MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

 5.1. Size:5161K  cn maspower
 msg80n350hlc0.pdf

MSG80N350FQC MSG80N350FQC

MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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