MSG80N350FQC PDF and Equivalents Search

 

MSG80N350FQC Specs and Replacement

Type Designator: MSG80N350FQC

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 380 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 180 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 320 pF

Package: TO247

 MSG80N350FQC Substitution

- IGBT ⓘ Cross-Reference Search

 

MSG80N350FQC datasheet

 ..1. Size:6853K  cn maspower
 msg80n350fqc.pdf pdf_icon

MSG80N350FQC

MSG80N350FQC Features Fast switching Low Saturation Voltage VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector Current T... See More ⇒

 4.1. Size:6662K  cn maspower
 msg80n350fh.pdf pdf_icon

MSG80N350FQC

MSG80N350FH Features Fast switching Low Saturation Voltage VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector Current TC... See More ⇒

 4.2. Size:6611K  cn maspower
 msg80n350fl.pdf pdf_icon

MSG80N350FQC

MSG80N350FL Features High Current Capability Low Saturation Voltage VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector ... See More ⇒

 5.1. Size:5161K  cn maspower
 msg80n350hlc0.pdf pdf_icon

MSG80N350FQC

MSG80N350HLC0 Features High Current Capability Low Saturation Voltage VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector ... See More ⇒

SHOW MORE

Specs: MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , GT30F132 , MSG80N350HLC0 , MSG80N60FQC , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 , JNG15T120AI , JNG15T120FS .

History: MSG30T65FT | MSG15T120FPE

Keywords - MSG80N350FQC transistor spec

 MSG80N350FQC cross reference
 MSG80N350FQC equivalent finder
 MSG80N350FQC lookup
 MSG80N350FQC substitution
 MSG80N350FQC replacement

 

 

 

 

↑ Back to Top
.