MSG80N350HLC0 Datasheet and Replacement
Type Designator: MSG80N350HLC0
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 180 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 120 nS
Coesⓘ - Output Capacitance, typ: 320 pF
Package: TO247
- IGBT Cross-Reference
MSG80N350HLC0 Datasheet (PDF)
msg80n350hlc0.pdf

MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector
msg80n350fqc.pdf

MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T
msg80n350fh.pdf

MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC
msg80n350fl.pdf

MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector
Datasheet: MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , IKW40N65WR5 , MSG80N60FQC , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 , JNG15T120AI , JNG15T120FS , JNG15T120HFU1 .
History: HGTP10N50E1
Keywords - MSG80N350HLC0 transistor datasheet
MSG80N350HLC0 cross reference
MSG80N350HLC0 equivalent finder
MSG80N350HLC0 lookup
MSG80N350HLC0 substitution
MSG80N350HLC0 replacement
History: HGTP10N50E1



LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
k117 transistor | 2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent