MSG80N60FQC IGBT. Datasheet pdf. Equivalent
Type Designator: MSG80N60FQC
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 260
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 180
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.25
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 30
Collector Capacity (Cc), typ, pF: 175
Total Gate Charge (Qg), typ, nC: 110
Package: TO247
MSG80N60FQC Transistor Equivalent Substitute - IGBT Cross-Reference Search
MSG80N60FQC Datasheet (PDF)
msg80n60fqc.pdf
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MSG80N60FQCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.25V @IC=80A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG80D60FLC UnitCollector-Emmiter Voltage Vces 600 V180 AIc T=25Col
msg80n350hlc0.pdf
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MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector
msg80n350fqc.pdf
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MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T
msg80n350fh.pdf
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MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC
msg80n350fl.pdf
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MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector
Datasheet: MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 , IRGP4750D , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 , JNG15T120AI , JNG15T120FS , JNG15T120HFU1 , JNG15T120HFU2 .
![MSG80N60FQC](https://alltransistors.com/images/us.png)
![MSG80N60FQC](https://alltransistors.com/images/es.png)
![MSG80N60FQC](https://alltransistors.com/images/ru.png)
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