Справочник IGBT. MSG80N60FQC

 

MSG80N60FQC - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MSG80N60FQC
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 180 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.25 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 175 pF
   Тип корпуса: TO247

 Аналог (замена) для MSG80N60FQC

 

 

MSG80N60FQC Datasheet (PDF)

 ..1. Size:3600K  cn maspower
 msg80n60fqc.pdf

MSG80N60FQC MSG80N60FQC

MSG80N60FQCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.25V @IC=80A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG80D60FLC UnitCollector-Emmiter Voltage Vces 600 V180 AIc T=25Col

 8.1. Size:5161K  cn maspower
 msg80n350hlc0.pdf

MSG80N60FQC MSG80N60FQC

MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

 8.2. Size:6853K  cn maspower
 msg80n350fqc.pdf

MSG80N60FQC MSG80N60FQC

MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T

 8.3. Size:6662K  cn maspower
 msg80n350fh.pdf

MSG80N60FQC MSG80N60FQC

MSG80N350FHFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current TC

 8.4. Size:6611K  cn maspower
 msg80n350fl.pdf

MSG80N60FQC MSG80N60FQC

MSG80N350FLFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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