2SH21 Datasheet and Replacement
Type Designator: 2SH21
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 350 nS
Package: TO3P
- IGBT Cross-Reference
2SH21 Datasheet (PDF)
2sh21.pdf

ADE208294 (Z)2SH21Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO3PHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate2. Collector132 3. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , GT30F132 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 .
History: IXGP2N100 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | NCE75TD120BTP | SII75N06 | TT050K065FQ
Keywords - 2SH21 transistor datasheet
2SH21 cross reference
2SH21 equivalent finder
2SH21 lookup
2SH21 substitution
2SH21 replacement
History: IXGP2N100 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | NCE75TD120BTP | SII75N06 | TT050K065FQ



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