All IGBT. 2SH21 Datasheet

 

2SH21 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2SH21
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 350 nS
   Package: TO3P

 2SH21 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2SH21 Datasheet (PDF)

 ..1. Size:46K  hitachi
 2sh21.pdf

2SH21 2SH21

ADE208294 (Z)2SH21Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO3PHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate2. Collector132 3. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

Datasheet: 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , MBQ50T65FESC , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 .

 

 
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