2SH21 PDF and Equivalents Search

 

2SH21 Specs and Replacement

Type Designator: 2SH21

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 350 nS

Package: TO3P

 2SH21 Substitution

- IGBT ⓘ Cross-Reference Search

 

2SH21 datasheet

 ..1. Size:46K  hitachi
 2sh21.pdf pdf_icon

2SH21

ADE 208 294 (Z) 2SH21 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO 3P High speed power switching Features 2 High speed switching Low on saturation voltage 1 1. Gate 2. Collector 1 3 2 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit ... See More ⇒

Specs: 2SH13, 2SH14, 2SH15, 2SH16, 2SH17, 2SH18, 2SH19, 2SH20, IRG4PC50W, 2SH22, 2SH26, 2SH27, 2SH28, 2SH29, 2SH30, 2SH31, HCKZ75N65BH2

Keywords - 2SH21 transistor spec

 2SH21 cross reference
 2SH21 equivalent finder
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