JNG80T60LS Datasheet and Replacement
Type Designator: JNG80T60LS
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 548 nS
Coesⓘ - Output Capacitance, typ: 470 pF
Qg ⓘ - Total Gate Charge, typ: 300 nC
Package: TO264
JNG80T60LS substitution
JNG80T60LS Datasheet (PDF)
jng80t60ls.pdf

JNG80T60LS IGBT Features 600V,80A V = 1.55V@V = 15V,I = 80A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpose inverter . Abso
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: DIM400XCM45-TS
Keywords - JNG80T60LS transistor datasheet
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JNG80T60LS lookup
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History: DIM400XCM45-TS



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