All IGBT. JNG80T60LS Datasheet

 

JNG80T60LS Datasheet and Replacement


   Type Designator: JNG80T60LS
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 548 nS
   Coesⓘ - Output Capacitance, typ: 470 pF
   Qg ⓘ - Total Gate Charge, typ: 300 nC
   Package: TO264
 

 JNG80T60LS substitution

   - IGBT ⓘ Cross-Reference Search

 

JNG80T60LS Datasheet (PDF)

 ..1. Size:1060K  jiaensemi
 jng80t60ls.pdf pdf_icon

JNG80T60LS

JNG80T60LS IGBT Features 600V,80A V = 1.55V@V = 15V,I = 80A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpose inverter . Abso

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: DIM400XCM45-TS

Keywords - JNG80T60LS transistor datasheet

 JNG80T60LS cross reference
 JNG80T60LS equivalent finder
 JNG80T60LS lookup
 JNG80T60LS substitution
 JNG80T60LS replacement

 

 
Back to Top

 


 
.