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JNG80T60LS Spec and Replacement


   Type Designator: JNG80T60LS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 548 nS
   Coesⓘ - Output Capacitance, typ: 470 pF
   Package: TO264

 JNG80T60LS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JNG80T60LS specs

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JNG80T60LS

JNG80T60LS IGBT Features 600V,80A V = 1.55V@V = 15V,I = 80A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heating UPS, AC & DC motor controls and general purpose inverter . Abso... See More ⇒

Specs: JNG50N120QS1 , JNG5T65DS1 , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , GT30F133 , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L .

History: JNG60T60HS

Keywords - JNG80T60LS transistor spec

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