All IGBT. JNG80T60LS Datasheet


JNG80T60LS IGBT. Datasheet pdf. Equivalent

Type Designator: JNG80T60LS

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 30

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 548

Collector Capacity (Cc), typ, pF: 470

Total Gate Charge (Qg), typ, nC: 300

Package: TO264

JNG80T60LS Transistor Equivalent Substitute - IGBT Cross-Reference Search


JNG80T60LS Datasheet (PDF)

 ..1. Size:1060K  jiaensemi


JNG80T60LS IGBT Features 600V,80A V = 1.55V@V = 15V,I = 80A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpose inverter . Abso

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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