JNG80T60LS Datasheet. Specs and Replacement

Type Designator: JNG80T60LS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 548 nS

Coesⓘ - Output Capacitance, typ: 470 pF

Package: TO264

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JNG80T60LS datasheet

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JNG80T60LS

JNG80T60LS IGBT Features 600V,80A V = 1.55V@V = 15V,I = 80A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heating UPS, AC & DC motor controls and general purpose inverter . Abso... See More ⇒

Specs: JNG50N120QS1, JNG5T65DS1, JNG60T60HS, JNG75T120LS, JNG75T120QS1, JNG75T120QZU1, JNG75T65HXU1, JNG75T65HYU2, GT30F133, JNG8T60FT1, JT075N065WED, AOK40B65H2AL, MBQ40T120FDS, FGA40N60UFD, CRG05T60A44S-G, CRG08T60A83L, CRG08T60A93L

Keywords - JNG80T60LS transistor spec

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