All IGBT. JNG8T60FT1 Datasheet


JNG8T60FT1 IGBT. Datasheet pdf. Equivalent

   Type Designator: JNG8T60FT1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 56
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 16
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 23
   Collector Capacity (Cc), typ, pF: 63
   Total Gate Charge (Qg), typ, nC: 32
   Package: TO252

 JNG8T60FT1 Transistor Equivalent Substitute - IGBT Cross-Reference Search


JNG8T60FT1 Datasheet (PDF)

 ..1. Size:1983K  jiaensemi


JNG8T60FT1 IGBT Features 600V,8A V =1.75V@V =15V,I =8A CE(sat)(typ.) GE C High speed switching and higher system efficiency Soft current turn-off waveforms Trench IGBT technology Applications UPS General inverter Air condition and others home applications Absolute Maximum RatingsTJ = 25 C unless otherwise noted Symbol Paramete

Datasheet: JNG5T65DS1 , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , MMIX1X200N60B3H1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD .


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