All IGBT. JNG8T60FT1 Datasheet

 

JNG8T60FT1 Datasheet and Replacement


   Type Designator: JNG8T60FT1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 56 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Qg ⓘ - Total Gate Charge, typ: 32 nC
   Package: TO252
 

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JNG8T60FT1 Datasheet (PDF)

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JNG8T60FT1

JNG8T60FT1 IGBT Features 600V,8A V =1.75V@V =15V,I =8A CE(sat)(typ.) GE C High speed switching and higher system efficiency Soft current turn-off waveforms Trench IGBT technology Applications UPS General inverter Air condition and others home applications Absolute Maximum RatingsTJ = 25 C unless otherwise noted Symbol Paramete

Datasheet: JNG5T65DS1 , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , RJH60F5DPQ-A0 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD .

History: MMG25H120X6TN

Keywords - JNG8T60FT1 transistor datasheet

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