All IGBT. CRG15T120BK3SD Datasheet

 

CRG15T120BK3SD IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG15T120BK3SD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G15T120BK3SD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 236
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 58
   Total Gate Charge (Qg), typ, nC: 75
   Package: TO247

 CRG15T120BK3SD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG15T120BK3SD Datasheet (PDF)

 ..1. Size:1087K  wuxi china
 crg15t120bk3sd.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T120BK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 236 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 4.1. Size:484K  wuxi china
 crg15t120bnr3s.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

 8.1. Size:1352K  wuxi china
 crg15t60a83l crg15t60a93l.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T60A83L, CRG15T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.7 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VC

 8.2. Size:1253K  wuxi china
 crg15t60a94s crg15t60a84s.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

 8.3. Size:1123K  wuxi china
 crg15t60a03l.pdf

CRG15T120BK3SD CRG15T120BK3SD

CRG15T60A03L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 96 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-263 Features FS Trench Technology, Positive temperature coefficient Low satur

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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