Справочник IGBT. CRG15T120BK3SD

 

CRG15T120BK3SD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: CRG15T120BK3SD
   Тип транзистора: IGBT + Diode
   Маркировка: G15T120BK3SD
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 236 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 58 pF
   Qgⓘ - Общий заряд затвора, typ: 75 nC
   Тип корпуса: TO247

 Аналог (замена) для CRG15T120BK3SD

 

 

CRG15T120BK3SD Datasheet (PDF)

 ..1. Size:1087K  wuxi china
 crg15t120bk3sd.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T120BK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 236 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 4.1. Size:484K  wuxi china
 crg15t120bnr3s.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

 8.1. Size:1352K  wuxi china
 crg15t60a83l crg15t60a93l.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T60A83L, CRG15T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.7 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VC

 8.2. Size:1253K  wuxi china
 crg15t60a94s crg15t60a84s.pdf

CRG15T120BK3SD CRG15T120BK3SD

Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

 8.3. Size:1123K  wuxi china
 crg15t60a03l.pdf

CRG15T120BK3SD CRG15T120BK3SD

CRG15T60A03L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 96 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-263 Features FS Trench Technology, Positive temperature coefficient Low satur

Другие IGBT... JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , YGW40N65F1A1 , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD .

 

 
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