All IGBT. SRE160N065FSUD8 Datasheet

 

SRE160N065FSUD8 IGBT. Datasheet pdf. Equivalent


   Type Designator: SRE160N065FSUD8
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.46 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 585 pF
   Qgⓘ - Total Gate Charge, typ: 356 nC
   Package: TO247PLUS

 SRE160N065FSUD8 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SRE160N065FSUD8 Datasheet (PDF)

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 sre160n065fsud8.pdf

SRE160N065FSUD8 SRE160N065FSUD8

Preliminary Datasheet 160A 650V Trench Fieldstop IGBT with FRD SRE160N065FSUD8 General Description Symbol The SRE160N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low conduction loss, high energy efficiency for switching applications such as Inverter, Driver, Converter, etc. The SRE160N065FSUD8 package is TO-247Plus. Features Figure 1 Sy

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