SRE160N065FSUD8 Datasheet and Replacement
Type Designator: SRE160N065FSUD8
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 882 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 240 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.46 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 585 pF
Qgⓘ - Total Gate Charge, typ: 356 nC
Package: TO247PLUS
- IGBT Cross-Reference
SRE160N065FSUD8 Datasheet (PDF)
sre160n065fsud8.pdf

Preliminary Datasheet 160A 650V Trench Fieldstop IGBT with FRD SRE160N065FSUD8 General Description Symbol The SRE160N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low conduction loss, high energy efficiency for switching applications such as Inverter, Driver, Converter, etc. The SRE160N065FSUD8 package is TO-247Plus. Features Figure 1 Sy
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: YGW20N65T2 | IXSM30N60A | FGA25S125P | IXSM40N60
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History: YGW20N65T2 | IXSM30N60A | FGA25S125P | IXSM40N60



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