All IGBT. 2SH22 Datasheet

 

2SH22 Datasheet and Replacement


   Type Designator: 2SH22
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 700 nS
   Package: TO3PL
      - IGBT Cross-Reference

 

2SH22 Datasheet (PDF)

 ..1. Size:45K  hitachi
 2sh22.pdf pdf_icon

2SH22

ADE208295 (Z)2SH22Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO3PLHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate32. Collector13. Emitter23Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

Datasheet: 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , GT30G122 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L .

History: AFGY120T65SPD | IXBF20N360 | SME6G30US60

Keywords - 2SH22 transistor datasheet

 2SH22 cross reference
 2SH22 equivalent finder
 2SH22 lookup
 2SH22 substitution
 2SH22 replacement

 

 
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