SRE75N065FSU2DH Specs and Replacement
Type Designator: SRE75N065FSU2DH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.49 V @25℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Package: TO247
SRE75N065FSU2DH Substitution - IGBT ⓘ Cross-Reference Search
SRE75N065FSU2DH datasheet
sre75n065fsu2dh.pdf
Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F... See More ⇒
sre75n065fsud6.pdf
Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N... See More ⇒
Specs: SRE50N120FSUS7T , SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , FGA25N120ANTD , SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 .
History: TA49052
Keywords - SRE75N065FSU2DH transistor spec
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History: TA49052
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