All IGBT. IXSM35N100A Datasheet

 

IXSM35N100A IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSM35N100A
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 300
   Maximum Collector-Emitter Voltage |Vce|, V: 1000
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 70
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 3.5(max)
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 150
   Collector Capacity (Cc), typ, pF: 325
   Total Gate Charge (Qg), typ, nC: 180
   Package: TO3

 IXSM35N100A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSM35N100A Datasheet (PDF)

 ..1. Size:78K  ixys
 ixsm35n100a.pdf

IXSM35N100A IXSM35N100A

High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A

 9.1. Size:263K  ixys
 ixsh30n60 ixsh30n60a ixsm30n60 ixsm30n60a.pdf

IXSM35N100A IXSM35N100A

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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