IXSM35N100A Datasheet and Replacement
Type Designator: IXSM35N100A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 325 pF
Package: TO3
IXSM35N100A substitution
IXSM35N100A Datasheet (PDF)
ixsm35n100a.pdf
High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A
Datasheet: HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , IKW75N60TA , IGW40N60TP , IRGP4063D , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA .
History: 6MBI50VW-060-50
Keywords - IXSM35N100A transistor datasheet
IXSM35N100A cross reference
IXSM35N100A equivalent finder
IXSM35N100A lookup
IXSM35N100A substitution
IXSM35N100A replacement
History: 6MBI50VW-060-50
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