IXSM35N100A Datasheet and Replacement
Type Designator: IXSM35N100A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 325 pF
Qgⓘ - Total Gate Charge, typ: 180 nC
Package: TO3
- IGBT Cross-Reference
IXSM35N100A Datasheet (PDF)
ixsm35n100a.pdf
High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXSN55N120A | IXSN55N120AU1 | IXA27IF1200HJ | SRE60N065FSU | SRE75N065FSU2DH | STGWT60V60DF
Keywords - IXSM35N100A transistor datasheet
IXSM35N100A cross reference
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History: IXSN55N120A | IXSN55N120AU1 | IXA27IF1200HJ | SRE60N065FSU | SRE75N065FSU2DH | STGWT60V60DF
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