IXSM35N100A Datasheet. Specs and Replacement

Type Designator: IXSM35N100A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 325 pF

Package: TO3

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IXSM35N100A datasheet

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IXSM35N100A

High speed IGBT IXSH 35N100A VCES = 1000 V IXSM 35N100A IC25 = 70 A VCE(sat) = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A IC90 TC = 90 C35 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 140 A ... See More ⇒

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 ixsh30n60 ixsh30n60a ixsm30n60 ixsm30n60a.pdf pdf_icon

IXSM35N100A

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Specs: HCKW75N65GH2, HCKZ75N65GH2, CRG40T120BK3S, GT30G122, IGW40T60, IGW40T60K, IKW75N60TA, IGW40N60TP, G50T65D, IXSM40N60, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, GT30F132, HIHS50N65H-SA

Keywords - IXSM35N100A transistor spec

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