DGU4020GR Datasheet and Replacement
Type Designator: DGU4020GR
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 172 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.1 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 3800 nS
Coesⓘ - Output Capacitance, typ: 460 pF
Package: TO252
- IGBT Cross-Reference
DGU4020GR Datasheet (PDF)
dgu4020gr.pdf

V = 400 V, I = 20 A BR(CES) CN-channel Ignition IGBTDGU4020GR Data Sheet Description Packages The DGU4020GR is 400 V IGBT with Zener diodes TO252-2L and gate resistors, and achieves an ignition coil drive circuit without an external clamped circuit. The IGBT (4)has low saturation characteristic, and can improve the efficiency of the circuit. Features AEC-Q101 Qualifi
Datasheet: IGW40T60 , IGW40T60K , IKW75N60TA , IGW40N60TP , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , YGW60N65F1A1 , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA .
History: HIA50N65T-JA | SGM35PA12A6BTFD | APT30GT60BRDLG | SRE50N120FSUS7T | IXSN35N120AU1 | YGP20N65T2
Keywords - DGU4020GR transistor datasheet
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History: HIA50N65T-JA | SGM35PA12A6BTFD | APT30GT60BRDLG | SRE50N120FSUS7T | IXSN35N120AU1 | YGP20N65T2



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