GT30F132 Specs and Replacement
Type Designator: GT30F132
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: TO220
GT30F132 Substitution - IGBT ⓘ Cross-Reference Search
GT30F132 datasheet
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Specs: IGW40N60TP , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , IHW20N135R5 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA .
Keywords - GT30F132 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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