GT30F132 Datasheet. Specs and Replacement
Type Designator: GT30F132 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: TO220
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GT30F132 datasheet
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Specs: IGW40N60TP, IXSM35N100A, IXSM40N60, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, RJH3047, HIHS50N65H-SA, HIA75N65H-SA, HIA30N65T-SA, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA
Keywords - GT30F132 transistor spec
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History: RJH60F7BDPQ-A0
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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