All IGBT. HIA30N140CIH-DA Datasheet

 

HIA30N140CIH-DA IGBT. Datasheet pdf. Equivalent

Type Designator: HIA30N140CIH-DA

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 300

Maximum Collector-Emitter Voltage |Vce|, V: 1400

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 60

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.2

Maximum Junction Temperature (Tj), ℃: 175

Collector Capacity (Cc), typ, pF: 54

Total Gate Charge (Qg), typ, nC: 126

Package: TO247

HIA30N140CIH-DA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA30N140CIH-DA Datasheet (PDF)

 0.1. Size:490K  semihow
hia30n140cih-da.pdf

HIA30N140CIH-DA
HIA30N140CIH-DA

Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

 5.1. Size:412K  semihow
hia30n140ih-da.pdf

HIA30N140CIH-DA
HIA30N140CIH-DA

September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY

 8.1. Size:663K  semihow
hia30n60bp.pdf

HIA30N140CIH-DA
HIA30N140CIH-DA

Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

 8.2. Size:529K  semihow
hia30n65t-sa.pdf

HIA30N140CIH-DA
HIA30N140CIH-DA

Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

Datasheet: GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , SGT40N60NPFDPN , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB .

 

 
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