All IGBT. HIA50N65T-JA Datasheet

 

HIA50N65T-JA Datasheet and Replacement


   Type Designator: HIA50N65T-JA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 272 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 105 nC
   Package: TO247
      - IGBT Cross-Reference

 

HIA50N65T-JA Datasheet (PDF)

 ..1. Size:481K  semihow
 hia50n65t-ja.pdf pdf_icon

HIA50N65T-JA

Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

 4.1. Size:477K  semihow
 hia50n65t-sa.pdf pdf_icon

HIA50N65T-JA

Mar 2023HIA50N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

 6.1. Size:479K  semihow
 hia50n65h-ja.pdf pdf_icon

HIA50N65T-JA

Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

 6.2. Size:472K  semihow
 hia50n65ih-sa.pdf pdf_icon

HIA50N65T-JA

Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc

SHOW MORE

Datasheet: GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , TGAN60N60F2DS , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , SG60T120UDB3 .

History: SGM35PA12A6BTFD | SRE50N120FSUS7T | IXSN35N120AU1 | APT30GT60BRDLG | YGP20N65T2

Keywords - HIA50N65T-JA transistor datasheet

 HIA50N65T-JA cross reference
 HIA50N65T-JA equivalent finder
 HIA50N65T-JA lookup
 HIA50N65T-JA substitution
 HIA50N65T-JA replacement

 

 
Back to Top

 


 
.