All IGBT. OST120N65H4SMF Datasheet

 

OST120N65H4SMF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST120N65H4SMF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 536 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 184 nS
   Coesⓘ - Output Capacitance, typ: 326 pF
   Package: TO247-4

 OST120N65H4SMF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST120N65H4SMF Datasheet (PDF)

 ..1. Size:787K  oriental semi
ost120n65h4smf.pdf

OST120N65H4SMF OST120N65H4SMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 3.1. Size:813K  oriental semi
ost120n65h4umf.pdf

OST120N65H4SMF OST120N65H4SMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.1. Size:767K  oriental semi
ost120n65h5smf.pdf

OST120N65H4SMF OST120N65H4SMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:774K  oriental semi
ost120n65hemf.pdf

OST120N65H4SMF OST120N65H4SMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

Datasheet: HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT , TGAN20N135FD , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF .

 

 
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