Справочник IGBT. OST120N65H4SMF

 

OST120N65H4SMF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST120N65H4SMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 536 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 160 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 184 nS
   Coesⓘ - Выходная емкость, типовая: 326 pF
   Qg ⓘ - Общий заряд затвора, typ: 477 nC
   Тип корпуса: TO247-4
 

 Аналог (замена) для OST120N65H4SMF

   - подбор ⓘ IGBT транзистора по параметрам

 

OST120N65H4SMF Datasheet (PDF)

 ..1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65H4SMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 3.1. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65H4SMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.1. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65H4SMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65H4SMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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