OST120N65H4SMF datasheet, аналоги, основные параметры

Наименование: OST120N65H4SMF  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 536 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 160 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃

tr ⓘ - Время нарастания типовое: 184 nS

Coesⓘ - Выходная емкость, типовая: 326 pF

Тип корпуса: TO247-4

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 Аналог (замена) для OST120N65H4SMF

- подбор ⓘ IGBT транзистора по параметрам

 

OST120N65H4SMF даташит

 ..1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65H4SMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 3.1. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65H4SMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.1. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65H4SMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65H4SMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HIA50N65H-SA, HIA50N65IH-JA, HIA20N140IH-DA, GT30F122, SG40T120DB, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT, FGH75T65UPD, OST120N65H4UMF, OST120N65H5SMF, OST120N65HEMF, OST15N65DRF, OST15N65FRF, OST15N65KRF, OST15N65PRF, OST160N65H5MF