All IGBT. OST40N65PMF Datasheet

 

OST40N65PMF Datasheet and Replacement


   Type Designator: OST40N65PMF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 68 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 78 nS
   Coesⓘ - Output Capacitance, typ: 119 pF
   Package: TO220
      - IGBT Cross-Reference

 

OST40N65PMF Datasheet (PDF)

 ..1. Size:742K  oriental semi
 ost40n65pmf.pdf pdf_icon

OST40N65PMF

OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N65PMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N65PMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:770K  oriental semi
 ost40n65hemf.pdf pdf_icon

OST40N65PMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

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Datasheet: OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , IKW40T120 , OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF .

History: 7MBR50VA060-50 | DM2G300SH6NE | RJP60V0DPM | GT10G101 | MG300N1US1 | IXGH35N120B | IXXK100N60C3H1

Keywords - OST40N65PMF transistor datasheet

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