Справочник IGBT. OST40N65PMF

 

OST40N65PMF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST40N65PMF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 78 nS
   Coesⓘ - Выходная емкость, типовая: 119 pF
   Тип корпуса: TO220
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OST40N65PMF Datasheet (PDF)

 ..1. Size:742K  oriental semi
 ost40n65pmf.pdf pdf_icon

OST40N65PMF

OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N65PMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N65PMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:770K  oriental semi
 ost40n65hemf.pdf pdf_icon

OST40N65PMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

ПОКАЗАТЬ ЕЩЁ

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History: OST50N65HEWF | SHSMG1009 | FD400R65KF1-K | KWBW60N65F4EG | IXA20PT1200LB | APTGT200DA170D3 | IXGM40N60

 

 
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