OST40N65PMF - аналоги и описание IGBT

 

OST40N65PMF - аналоги, основные параметры, даташиты

Наименование: OST40N65PMF

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 78 nS

Coesⓘ - Выходная емкость, типовая: 119 pF

Тип корпуса: TO220

 Аналог (замена) для OST40N65PMF

- подбор ⓘ IGBT транзистора по параметрам

 

OST40N65PMF даташит

 ..1. Size:742K  oriental semi
 ost40n65pmf.pdf pdf_icon

OST40N65PMF

OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N65PMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N65PMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:770K  oriental semi
 ost40n65hemf.pdf pdf_icon

OST40N65PMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , MBQ40T65FDSC , OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF .

 

 

 

 

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