All IGBT. OST50N65HSNF Datasheet

 

OST50N65HSNF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST50N65HSNF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 53.6 nS
   Coesⓘ - Output Capacitance, typ: 184 pF
   Qgⓘ - Total Gate Charge, typ: 108.7 nC
   Package: TO247

 OST50N65HSNF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST50N65HSNF Datasheet (PDF)

 ..1. Size:752K  oriental semi
ost50n65hsnf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:747K  oriental semi
ost50n65hszf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:732K  oriental semi
ost50n65hmf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:535K  oriental semi
ost50n65hf-d.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.3. Size:756K  oriental semi
ost50n65hewf.pdf

OST50N65HSNF OST50N65HSNF

 5.4. Size:755K  oriental semi
ost50n65h4ewf.pdf

OST50N65HSNF OST50N65HSNF

 5.5. Size:765K  oriental semi
ost50n65hm2f.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.6. Size:617K  oriental semi
ost50n65hzf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.7. Size:698K  oriental semi
ost50n65hf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

 5.8. Size:745K  oriental semi
ost50n65hxf.pdf

OST50N65HSNF OST50N65HSNF

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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